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SBVS046D December 2003 – March 2016 REF3112 , REF3120 , REF3125 , REF3130 , REF3133 , REF3140

PRODUCTION DATA.

封裝選項(xiàng)

請(qǐng)參考 PDF 數(shù)據(jù)表獲取器件具體的封裝圖。

機(jī)械數(shù)據(jù) (封裝 | 引腳)

DBZ|3

散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)

訂購信息

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

	MIN	MAX	UNIT
Supply voltage, V+ to V–		7	V
Output short circuit	Continuous
Operating temperature	–55	135	°C
Junction temperature		150	°C
Storage temperature, T_stg	–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±2000	V
V_(ESD)	Electrostatic discharge	Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±1000	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

		MIN	MAX	UNIT
V_IN	Input voltage	V_REF + 0.05⁽¹⁾	5.5	V
I_LOAD	Load current		25	mA
T_A	Operating temperature	–40	125	°C

(1) Minimum supply voltage for the REF3112 is 1.8 V.

7.4 Thermal Information

THERMAL METRIC⁽¹⁾		REF31xx	UNIT
		DBZ (SOT-23)
		3 PINS
R_θJA	Junction-to-ambient thermal resistance	292.9	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	124.4	°C/W
R_θJB	Junction-to-board thermal resistance	89	°C/W
ψ_JT	Junction-to-top characterization parameter	11.4	°C/W
ψ_JB	Junction-to-board characterization parameter	87.6	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	—	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

at T_A = 25°C, I_LOAD = 0 mA, and V_IN = 5 V (unless otherwise noted)

PARAMETER				TEST CONDITIONS	MIN	TYP	MAX	UNIT
REF3312⁽¹⁾ — 1.25 V
V_OUT	Output voltage				1.2475	1.25	1.2525	V
V_OUT		Initial accuracy			–0.2%		0.2%
	Output voltage noise			f = 0.1 Hz to 10 Hz		17		μV_PP
	Output voltage noise			f = 10 Hz to 10 kHz		24		μV_RMS
REF3120 — 2.048 V
V_OUT	Output voltage				2.0439	2.048	2.0521	V
V_OUT		Initial accuracy			–0.2%		0.2%
	Output voltage noise			f = 0.1Hz to 10Hz		27		μV_PP
	Output voltage noise			f = 10Hz to 10kHz		39		μV_RMS
REF3125 — 2.5 V
V_OUT	Output voltage				2.495	2.5	2.505	V
V_OUT		Initial accuracy			–0.2%		0.2%
	Output voltage noise			f = 0.1Hz to 10Hz		33		μV_PP
	Output voltage noise			f = 10Hz to 10kHz		48		μV_RMS
REF3130 — 3 V
V_OUT	Output voltage				2.994	3	3.006	V
V_OUT		Initial accuracy			–0.2%		0.2%
	Output voltage noise			f = 0.1Hz to 10Hz		39		μV_PP
	Output voltage noise			f = 10Hz to 10kHz		57		μV_RMS
REF3133 — 3.3 V
V_OUT	Output voltage				3.2934	3.3	3.3066	V
V_OUT		Initial accuracy			–0.2%		0.2%
	Output voltage noise			f = 0.1Hz to 10Hz		43		μV_PP
	Output voltage noise			f = 10Hz to 10kHz		63		μV_RMS
REF3140 — 4.096 V
V_OUT	Output voltage				4.0878	4.096	4.1042	V
V_OUT		Initial accuracy			–0.2%		0.2%
	Output voltage noise			f = 0.1Hz to 10Hz		53		μV_PP
	Output voltage noise			f = 10Hz to 10kHz		78		μV_RMS
REF31xx (REF3112, REF3120, REF3125, REF3130, REF3133, REF3140)
dV_OUT/dT	Output voltage temperature drift⁽²⁾			T_A = 0°C to 70°C.		5	15	ppm/°C
dV_OUT/dT	Output voltage temperature drift⁽²⁾			T_A = –40°C to +125°C .		10	20	ppm/°C
	Long-term stability			0 to 1000 hours		70		ppm
	Line regulation			V_REF + 0.05⁽¹⁾ ≤ V_IN ≤ 5.5V		20	65	ppm/V
dV_OUT/dI_LOAD	Load regulation⁽³⁾		Sourcing	0mA < I_LOAD < 10mA, V_IN = V_REF + 250mV⁽¹⁾		10	30	µV/mA
dV_OUT/dI_LOAD	Load regulation⁽³⁾		Sinking	–10mA < I_LOAD < 0mA, V_IN = V_REF + 100mV⁽¹⁾		20	50	µV/mA
dT	Thermal hysteresis⁽⁴⁾		First Cycle			100		ppm
dT	Thermal hysteresis⁽⁴⁾		Additional Cycles			25		ppm
V_IN – V_OUT	Dropout voltage⁽¹⁾			T_A = –40°C to +125°C.		5	50	mV
I_LOAD	Output current				–10		10	mA
I_SC	Short-circuit current		Sourcing			50		mA
I_SC	Short-circuit current		Sinking			40		mA
	Turnon settling time			To 0.1% at V_IN = +5V with C_L = 0μF		400		µs
POWER SUPPLY
V_S	Voltage			I_LOAD = 0, T_A = –40°C to +125°C.	V_REF + 0.05⁽¹⁾		5.5	V
I_Q	Quiescent current			I_LOAD = 0, T_A= 25°C		100	115	µA
I_Q	Quiescent current			I_LOAD = 0, T_A = –40°C to +125°C		115	135	µA