ZHCSF42B May 2016 – August 2016 REF6125 , REF6130 , REF6133 , REF6141 , REF6145 , REF6150
PRODUCTION DATA.
- 1 特性
- 2 應(yīng)用
- 3 說明
- 4 修訂歷史記錄
- 5 Device Comparison Table
- 6 Pin Configuration and Functions
- 7 Specifications
- 8 Parameter Measurement Information
- 9 Detailed Description
- 10Applications and Implementation
- 11Power Supply Recommendations
- 12Layout
- 13器件和文檔支持
- 14機械、封裝和可訂購信息
封裝選項
機械數(shù)據(jù) (封裝 | 引腳)
- DGK|8
散熱焊盤機械數(shù)據(jù) (封裝 | 引腳)
訂購信息
7 Specifications
7.1 Absolute Maximum Ratings(1)
over operating free-air temperature range (unless otherwise noted)| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| Input voltage | VIN | –0.3 | 6 | V |
| VEN | –0.3 | VIN + 0.3 | V | |
| Operating temperature, TA | –55 | 150 | °C | |
| Junction temperature, Tj | 150 | °C | ||
| Storage temperature, Tstg | –65 | 150 | °C | |
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
7.2 ESD Ratings
| VALUE | UNIT | |||
|---|---|---|---|---|
| V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±1000 | V |
| Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±250 | |||
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
7.4 Thermal Information
| THERMAL METRIC(1) | REF61xx | UNIT | |
|---|---|---|---|
| DGK (VSSOP) | |||
| 8 PINS | |||
| RθJA | Junction-to-ambient thermal resistance | 158.5 | °C/W |
| RθJC(top) | Junction-to-case (top) thermal resistance | 51.2 | °C/W |
| RθJB | Junction-to-board thermal resistance | 79.5 | °C/W |
| ψJT | Junction-to-top characterization parameter | 5.2 | °C/W |
| ψJB | Junction-to-board characterization parameter | 78.0 | °C/W |
| RθJC(bot) | Junction-to-case (bottom) thermal resistance | N/A | °C/W |
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.
7.5 Electrical Characteristics
at TA = 25°C, VIN = 5 V for all devices except REF6150, VIN = 5.4 V for REF6150, IL = 0 mA, CL = 22 µF, CFILT = 1 µF, and VEN = 5 V (unless otherwise noted)| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |||||
|---|---|---|---|---|---|---|---|---|---|---|
| ACCURACY AND DRIFT | ||||||||||
| Output voltage accuracy | -0.05% | 0.05% | ||||||||
| Output voltage temperature coefficient(1) | 8 | ppm/°C | ||||||||
| LINE AND LOAD REGULATION | ||||||||||
| ΔVO(ΔVI) | Line regulation | REF6125 | VOUT + 0.5 V ≤ VIN ≤ 5.5 V | TA = 25°C | 4 | 20 | ppm/V | |||
| TA = –40°C to +125°C | 30 | |||||||||
| REF6130, REF6133, REF6141, REF6145 | VOUT + 0.25 V ≤ VIN ≤ 5.5 V | TA = 25°C | 4 | 20 | ||||||
| TA = –40°C to +125°C | 30 | |||||||||
| REF6150 | VOUT + 0.3 V ≤ VIN ≤ 5.5 V | TA = 25°C | 7 | 60 | ||||||
| TA = –40°C to +125°C | 120 | |||||||||
| ΔVO(ΔIL) | Load regulation, sourcing and sinking | REF6125, REF6130, REF6133, REF6141 | IL = 0 mA to 4 mA, VIN = VOUT + 600 mV |
TA = 25°C | 2 | 20 | ppm/mA | |||
| TA = –40°C to +125°C | 30 | |||||||||
| REF6145 | IL = 0 mA to 3.5 mA, VIN = VOUT + 600 mV |
TA = 25°C | 2 | 20 | ||||||
| TA = –40°C to +125°C | 30 | |||||||||
| REF6150 | IL = 0 mA to 3 mA, VIN = VOUT + 400 mV |
TA = 25°C | 2 | 20 | ||||||
| TA = –40°C to +125°C | 50 | |||||||||
| ISC | Short-circuit current | SS = open | 10.5 | mA | ||||||
| NOISE | ||||||||||
| Total integrated noise | CL = 22 µF | 5 | µVRMS | |||||||
| CL = 47 µF | 5 | |||||||||
| Low frequency noise | 0.1 Hz ≤ f ≤ 10 Hz | 3 | µVPP/V | |||||||
| OUTPUT IMPEDANCE | ||||||||||
| Output impedance | f = DC to 200 kHz, CL= 47 μF | 50 | mΩ | |||||||
| TURN-ON TIME | ||||||||||
| ton | Turn-on time | 0.1% settling, CL = 47 µF, SS = open, REF6125 | 100 | ms | ||||||
| HYSTERESIS AND LONG TERM DRIFT | ||||||||||
| Long term stability | 0 to 1000h at 25°C | 80 | ppm | |||||||
| 1000h to 2000h at 25°C | 20 | |||||||||
| Output voltage hysteresis(2) | 25°C, –40°C,125°C, 25°C (cycle 1) | 33 | ppm | |||||||
| 25°C, –40°C,125°C, 25°C (cycle 2) | 8 | |||||||||
| CAPACITIVE LOAD | ||||||||||
| CL | Stable output capacitor value | 10 | 47 | µF | ||||||
| OUTPUT VOLTAGE | ||||||||||
| VOUT | Output voltage | REF6125 | 2.5 | V | ||||||
| REF6130 | 3 | |||||||||
| REF6133 | 3.3 | |||||||||
| REF6141 | 4.096 | |||||||||
| REF6145 | 4.5 | |||||||||
| REF6150 | 5 | |||||||||
| POWER SUPPLY | ||||||||||
| ICC | Supply current | REF6125, REF6130, REF6133, REF6141 | Active mode, VEN = 5 V | TA = 25°C | 0.82 | 0.90 | mA | |||
| TA = –40°C to +125°C | 1.1 | |||||||||
| REF6145, REF6150 | Active mode, VEN = 5 V | TA = 25°C | 0.83 | 0.95 | ||||||
| TA = –40°C to +125°C | 1.15 | |||||||||
| Shutdown mode, VEN = 0 V | TA = 25°C | 1 | 3 | µA | ||||||
| TA = –40°C to +125°C | 15 | |||||||||
| Enable pin voltage | Voltage reference in active mode (EN = 1) | 1.6 | V | |||||||
| Voltage reference in shutdown mode (EN = 0) | 0.6 | |||||||||
| Enable pin current | VEN = 5 V | 100 | 150 | nA | ||||||
| Dropout voltage | REF6125 | IL = 0 mA | 500 | 500 | mV | |||||
| IL = 4 mA | 600 | |||||||||
| REF6130, REF6133, REF6141 | IL = 0 mA | 50 | 250 | |||||||
| IL = 4 mA | 600 | |||||||||
| REF6145 | IL = 0 mA | 50 | 250 | |||||||
| IL = 3.5 mA | 600 | |||||||||
| REF6150 | IL = 0 mA | 100 | 300 | |||||||
| IL = 3 mA | 400 | |||||||||
(1) Temperature drift is specified according to the box method. See the Feature Description section for more details.
(2) See the Thermal Hysteresis section.
7.6 Typical Characteristics
at TA = 25°C, IL = 0 mA, and VIN = 5 V, using REF6125 (unless otherwise noted)
| VIN = VOUT + 600 mV, | ||
| IL = 0 mA to 4 mA | ||
| VOUT + 0.25 V ≤ VIN ≤ 5.5 V | ||
| Load current = ±1 mA |
| REF6150 driving REF pin of ADS8881, | ||
| fIN = 1 kHz, SNR = 100.5 dB, THD = –125.9 dB |
| REF6150 driving REF pin of ADS8881, | ||
| fIN = 10 kHz, SNR = 99.2 dB, THD = –119.4 dB |
| REF6141 driving REF pin of ADS8881, | ||
| fIN = 2 kHz, SNR = 99 dB, THD = –123.6 dB |
| REF6125 driving REF pin of ADS8881, | ||
| fIN = 1 kHz, SNR = 95.4 dB, THD = –124 dB |
| REF6125 driving REF pin of ADS8881, | ||
| fIN = 10 kHz, SNR = 94.0 dB, THD = –119.3 dB |
| REF6150 driving REF pin of ADS8881 operating at 1 MSPS, | ||
| negative full-scale input to ADS8881 |
| AINP = AINN = VREF / 2 for ADS8881, | ||
| sampling rate = 1 MSPS |
| AINP = AINN = VREF / 2 for ADS8881, | ||
| sampling rate = 100 kSPS |
| 1 LSB = 19.07 µV, with ADS8881 at 1 MSPS |
| VIN = VOUT + 600 mV, | ||
| IL = 0 mA to 4 mA | ||
| Graph obtained by design simulation |
| Load current = ±3 mA |
| REF6150 driving REF pin of ADS8881, | ||
| fIN = 2 kHz, SNR = 100.4 dB, THD = –123.9 dB |
| REF6141 driving REF pin of ADS8881, | ||
| fIN = 1 kHz, SNR = 99 dB, THD = –124.4 dB |
| REF6141 driving REF pin of ADS8881, | ||
| fIN = 10 kHz, SNR = 97.2 dB, THD = –119.7 dB |
| REF6125 driving REF pin of ADS8881, | ||
| fIN = 2 kHz, SNR = 95.4 dB, THD = –123.5 dB |
| REF6150 driving REF pin of ADS8881 operating at 1 MSPS, | ||
| positive full-scale input to ADS8881 |
| REF6150 driving REF pin of ADS8881 operating at 1 MSPS, | ||
| AINP = AINN = VREF / 2 for ADS8881 |
| AINP = AINN = VREF / 2 for ADS8881, | ||
| sampling rate = 500 kSPS |
| AINP = AINN = VREF / 2 for ADS8881, | ||
| sampling rate = 20 kSPS |