SN74CBTD3306C

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具有–2V 下沖保護(hù)和電平轉(zhuǎn)換功能的 5V、1:1 (SPST)、2 通道總線開關(guān)（低電平有效）

產(chǎn)品詳情

Protocols Analog Configuration 1:1 SPST Number of channels 2 Bandwidth (MHz) 20 Supply voltage (max) (V) 5.5 Ron (typ) (mΩ) 3000 Input/output voltage (min) (V) 0 Input/output voltage (max) (V) 5.5 Operating temperature range (°C) -40 to 85 ESD CDM (kV) 1 Input/output continuous current (max) (mA) 128 COFF (typ) (pF) 5 CON (typ) (pF) 12.5 OFF-state leakage current (max) (μA) 10 Ron (max) (mΩ) 20000 VIH (min) (V) 2 VIL (max) (V) 0.8 Rating Catalog
Protocols Analog Configuration 1:1 SPST Number of channels 2 Bandwidth (MHz) 20 Supply voltage (max) (V) 5.5 Ron (typ) (mΩ) 3000 Input/output voltage (min) (V) 0 Input/output voltage (max) (V) 5.5 Operating temperature range (°C) -40 to 85 ESD CDM (kV) 1 Input/output continuous current (max) (mA) 128 COFF (typ) (pF) 5 CON (typ) (pF) 12.5 OFF-state leakage current (max) (μA) 10 Ron (max) (mΩ) 20000 VIH (min) (V) 2 VIL (max) (V) 0.8 Rating Catalog
SOIC (D) 8 29.4 mm2 4.9 x 6 TSSOP (PW) 8 19.2 mm2 3 x 6.4
  • Undershoot Protection for Off-Isolation on A and B Ports Up To –2 V
  • Integrated Diode to VCC Provides 5-V Input Down To 3.3-V Output Level Shift
  • Bidirectional Data Flow, With Near-Zero Propagation Delay
  • Low ON-State Resistance (ron) Characteristics (ron = 3 Typical)
  • Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 5 pF Typical)
  • Data and Control Inputs Provide Undershoot Clamp Diodes
  • VCC Operating Range From 4.5 V to 5.5 V
  • Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
  • Control Inputs Can be Driven by TTL or 5-V/3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Both Digital and Analog Applications: USB Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating
  • Undershoot Protection for Off-Isolation on A and B Ports Up To –2 V
  • Integrated Diode to VCC Provides 5-V Input Down To 3.3-V Output Level Shift
  • Bidirectional Data Flow, With Near-Zero Propagation Delay
  • Low ON-State Resistance (ron) Characteristics (ron = 3 Typical)
  • Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 5 pF Typical)
  • Data and Control Inputs Provide Undershoot Clamp Diodes
  • VCC Operating Range From 4.5 V to 5.5 V
  • Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
  • Control Inputs Can be Driven by TTL or 5-V/3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Both Digital and Analog Applications: USB Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating

The SN74CBTD3306C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. This device features an integrated diode in series with VCC to provide level shifting for 5-V input down to 3.3-V output levels. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBTD3306C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state.

The SN74CBTD3306C is organized as two 1-bit bus switches with separate output-enable (1OE\, 2OE\) inputs. It can be used as two 1-bit bus switches or as one 2-bit bus switch. When OE\ is low, the associated 1-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE\ is high, the associated 1-bit bus switch is OFF, and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down.

To ensure the high-impedance state during power up or power down, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN74CBTD3306C is a high-speed TTL-compatible FET bus switch with low ON-state resistance (ron), allowing for minimal propagation delay. This device features an integrated diode in series with VCC to provide level shifting for 5-V input down to 3.3-V output levels. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBTD3306C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state.

The SN74CBTD3306C is organized as two 1-bit bus switches with separate output-enable (1OE\, 2OE\) inputs. It can be used as two 1-bit bus switches or as one 2-bit bus switch. When OE\ is low, the associated 1-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE\ is high, the associated 1-bit bus switch is OFF, and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down.

To ensure the high-impedance state during power up or power down, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
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SN74CBT3306C 正在供貨 具有 –2V 下沖保護(hù)的 5V、1:1 (SPST)、2 通道 FET 總線開關(guān)（低電平有效） Supports I2C and UART

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類型 標(biāo)題 下載最新的英語版本 日期
* 數(shù)據(jù)表 SN74CBTD3306C 數(shù)據(jù)表 (Rev. A) 2003年 10月 15日
應(yīng)用手冊(cè) 選擇正確的德州儀器 (TI) 信號(hào)開關(guān) (Rev. E) PDF | HTML 英語版 (Rev.E) PDF | HTML 2022年 8月 5日
應(yīng)用手冊(cè) CBT-C、CB3T 和 CB3Q 信號(hào)開關(guān)系列 (Rev. C) PDF | HTML 英語版 (Rev.C) PDF | HTML 2022年 3月 11日
應(yīng)用手冊(cè) 多路復(fù)用器和信號(hào)開關(guān)詞匯表 (Rev. B) 英語版 (Rev.B) PDF | HTML 2022年 3月 11日
應(yīng)用簡報(bào) 利用關(guān)斷保護(hù)信號(hào)開關(guān)消除電源時(shí)序 (Rev. C) 英語版 (Rev.C) PDF | HTML 2021年 10月 21日
選擇指南 Little Logic Guide 2018 (Rev. G) 2018年 7月 6日
選擇指南 Logic Guide (Rev. AB) 2017年 6月 12日
應(yīng)用手冊(cè) Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) 2015年 12月 2日
選擇指南 邏輯器件指南 2014 (Rev. AA) 最新英語版本 (Rev.AB) 2014年 11月 17日
選擇指南 小尺寸邏輯器件指南 (Rev. E) 最新英語版本 (Rev.G) 2012年 7月 16日
用戶指南 LOGIC Pocket Data Book (Rev. B) 2007年 1月 16日
更多文獻(xiàn)資料 Digital Bus Switch Selection Guide (Rev. A) 2004年 11月 10日
應(yīng)用手冊(cè) Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 2004年 7月 8日
用戶指南 Signal Switch Data Book (Rev. A) 2003年 11月 14日
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DIP-ADAPTER-EVM — DIP 適配器評(píng)估模塊

借助 DIP-Adapter-EVM 加快運(yùn)算放大器的原型設(shè)計(jì)和測(cè)試，該 EVM 有助于快速輕松地連接小型表面貼裝 IC 并且價(jià)格低廉。您可以使用隨附的 Samtec 端子板連接任何受支持的運(yùn)算放大器，或者將這些端子板直接連接至現(xiàn)有電路。

DIP-Adapter-EVM 套件支持六種常用的業(yè)界通用封裝，包括：

  • D 和 U (SOIC-8)
  • PW (TSSOP-8)
  • DGK（MSOP-8、VSSOP-8）
  • DBV（SOT23-6、SOT23-5 和 SOT23-3）
  • DCK（SC70-6 和 SC70-5）
  • DRL (SOT563-6)
用戶指南: PDF
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接口適配器

LEADED-ADAPTER1 — 表面貼裝轉(zhuǎn) DIP 接頭適配器，用于快速測(cè)試 TI 的 5、8、10、16 和 24 引腳引線式封裝。

EVM-LEADED1 電路板可用于對(duì) TI 的常見引線式封裝進(jìn)行快速測(cè)試和電路板試驗(yàn)。? 該電路板具有足夠的空間，可將 TI 的 D、DBQ、DCT、DCU、DDF、DGS、DGV 和 PW 表面貼裝封裝轉(zhuǎn)換為 100mil DIP 接頭。?????

用戶指南: PDF
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仿真模型

HSPICE MODEL OF SN74CBTD3306C

SCEJ240.ZIP (94 KB) - HSpice Model
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仿真模型

SN74CBTD3306C IBIS Model

SCDM039.ZIP (14 KB) - IBIS Model
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封裝 引腳 CAD 符號(hào)、封裝和 3D 模型
SOIC (D) 8 Ultra Librarian
TSSOP (PW) 8 Ultra Librarian

訂購和質(zhì)量

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  • RoHS
  • REACH
  • 器件標(biāo)識(shí)
  • 引腳鍍層/焊球材料
  • MSL 等級(jí)/回流焊峰值溫度
  • MTBF/時(shí)基故障估算
  • 材料成分
  • 鑒定摘要
  • 持續(xù)可靠性監(jiān)測(cè)
包含信息：
  • 制造廠地點(diǎn)
  • 封裝廠地點(diǎn)

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