SN74CBTLV3857
- Enable Signal Is SSTL_2 Compatible
- Flow-Through Architecture Optimizes PCB Layout
- Designed for Use With 200 Mbit/s Double Data-Rate (DDR) SDRAM Applications
- Switch On-State Resistance Is Designed to Eliminate Series Resistor to DDR SDRAM
- Internal 10-k
Pulldown Resistors to Ground on B Port
- Internal 50-k
Pullup Resistor on Output-Enable Input
- Rail-to-Rail Switching on Data I/O Ports
- Ioff Supports Partial-Power-Down Mode Operation
- Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
This 10-bit FET bus switch is designed for 3-V to 3.6-V VCC operation and SSTL_2 output-enable (OE\) input levels.
When OE\ is low, the 10-bit bus switch is on, and port A is connected to port B. When OE\ is high, the switch is open, and
the high-impedance state exists between the two ports. There are 10-k pulldown resistors
to ground on the B port.
The FET switch on-state resistance is designed to replace the series terminating resistor in the SSTL_2 data path.
This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off.
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LEADED-ADAPTER1 — 表面貼裝轉(zhuǎn) DIP 接頭適配器,用于快速測(cè)試 TI 的 5、8、10、16 和 24 引腳引線式封裝。
EVM-LEADED1 電路板可用于對(duì) TI 的常見引線式封裝進(jìn)行快速測(cè)試和電路板試驗(yàn)。? 該電路板具有足夠的空間,可將 TI 的 D、DBQ、DCT、DCU、DDF、DGS、DGV 和 PW 表面貼裝封裝轉(zhuǎn)換為 100mil DIP 接頭。?????
封裝 | 引腳 | CAD 符號(hào)、封裝和 3D 模型 |
---|---|---|
SOIC (DW) | 24 | Ultra Librarian |
訂購(gòu)和質(zhì)量
- RoHS
- REACH
- 器件標(biāo)識(shí)
- 引腳鍍層/焊球材料
- MSL 等級(jí)/回流焊峰值溫度
- MTBF/時(shí)基故障估算
- 材料成分
- 鑒定摘要
- 持續(xù)可靠性監(jiān)測(cè)
- 制造廠地點(diǎn)
- 封裝廠地點(diǎn)