ZHCSKO3B January 2020 – September 2020 BQ25611D
PRODUCTION DATA
- 1 特性
- 2 應(yīng)用
- 3 說(shuō)明
- 4 Revision History
- 5 說(shuō)明（續(xù)）
- 6 Device Comparison Table
- 7 Pin Configuration and Functions
- 8 Specifications
-
9 Detailed Description
- 9.1 Overview
- 9.2 Functional Block Diagram
- 9.3
Feature Description
- 9.3.1 Power-On-Reset (POR)
- 9.3.2 Device Power Up from Battery without Input Source
- 9.3.3 Power Up from Input Source
- 9.3.4 Boost Mode Operation From Battery
- 9.3.5 Power Path Management
- 9.3.6 Battery Charging Management
- 9.3.7 Ship Mode and QON Pin
- 9.3.8 Status Outputs ( STAT, INT )
- 9.3.9 Protections
- 9.3.10 Serial Interface
- 9.4 Device Functional Modes
- 9.5 Register Maps
- 10Application and Implementation
- 11Power Supply Recommendations
- 12Layout
- 13Device and Documentation Support
- 14Mechanical, Packaging, and Orderable Information
封裝選項(xiàng)
機(jī)械數(shù)據(jù) (封裝 | 引腳)
- RTW|24
散熱焊盤(pán)機(jī)械數(shù)據(jù) (封裝 | 引腳)
- RTW|24
訂購(gòu)信息
8.7 Typical Characteristics
| VBUS = 5 V, 9 V, 12 V | VBAT = 3.8 V | Inductor 1μH, DCR = 14.6 mΩ |
Figure 8-3 Charge Current Accuracy
Figure 8-5 Charge Current vs Junction Temperature
Figure 8-7 SYSMIN Voltage vs Junction Temperature (VSYS set at 3.5V)
Figure 8-9 Boost Output Voltage vs Junction Temperature
| VBAT = 3.2 V, 3.8 V, 4.2 V | VBUS = 5 V | Inductor 1μH, DCR = 14.6 mΩ |
Figure 8-4 Battery Charge Voltage vs Junction Temperature
Figure 8-6 VINDPM vs Junction Temperature
Figure 8-8 Input Current Limit vs Junction Temperature
Figure 8-10 Charge Current vs Junction Temperature