ZHCSEF6E December 2014 – September 2016 DRV5033-Q1
PRODUCTION DATA.
- 1 特性
- 2 應(yīng)用
- 3 說明
- 4 修訂歷史記錄
- 5 Pin Configuration and Functions
- 6 Specifications
- 7 Detailed Description
- 8 Application and Implementation
- 9 Power Supply Recommendations
- 10器件和文檔支持
- 11機(jī)械、封裝和可訂購信息
封裝選項
機(jī)械數(shù)據(jù) (封裝 | 引腳)
散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)
訂購信息
10 器件和文檔支持
10.1 器件支持
10.1.2 器件標(biāo)記
Figure 24. SOT-23 (DBZ) 封裝
Figure 25. TO-92 (LPG) 封裝
表示霍爾效應(yīng)傳感器（未按比例顯示）。霍爾元件置于封裝中央位置，容差為 ±100µm。在 DBZ 封裝中，霍爾元件與封裝底部的距離為 0.7mm ± 50µm；在 LPG 封裝中，霍爾元件與封裝底部的距離為 0.987mm ± 50µm。10.2 社區(qū)資源
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.
-
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
-
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.
10.3 商標(biāo)
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
10.4 靜電放電警告
這些裝置包含有限的內(nèi)置 ESD 保護(hù)。 存儲或裝卸時，應(yīng)將導(dǎo)線一起截短或?qū)⒀b置放置于導(dǎo)電泡棉中，以防止 MOS 門極遭受靜電損傷。
10.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.