ZHCSCJ2 June 2014 LM3633
PRODUCTION DATA.
- 1 特性
- 2 應用范圍
- 3 說明
- 4 修訂歷史記錄
- 5 Pin Configuration and Functions
- 6 Specifications
-
7 Detailed Description
- 7.1 Overview
- 7.2 Functional Block Diagram
- 7.3 Feature Description
- 7.4
Device Functional Modes
- 7.4.1
High-Voltage LED Control
- 7.4.1.1 High-Voltage Boost Converter
- 7.4.1.2 High-Voltage Current Sinks (HVLED1, HVLED2 and HVLED3)
- 7.4.1.3 High-Voltage Current String Biasing
- 7.4.1.4 Boost Switching-Frequency Select
- 7.4.1.5 Automatic Switching Frequency Shift
- 7.4.1.6 Brightness Register Current Control
- 7.4.1.7 PWM Control
- 7.4.1.8 Start-up/Shutdown Ramp
- 7.4.1.9 Run-Time Ramp
- 7.4.1.10 High-Voltage Control A/B Ramp Select
- 7.4.1.11 LED Current Mapping Modes
- 7.4.1.12 Exponential Mapping
- 7.4.1.13 Linear Mapping
- 7.4.2
Low-Voltage LED Control
- 7.4.2.1 Integrated Charge Pump
- 7.4.2.2 Charge Pump Disabled
- 7.4.2.3 Automatic Gain
- 7.4.2.4 Automatic Gain (Flying Capacitor Detection)
- 7.4.2.5 1X Gain
- 7.4.2.6 2X Gain
- 7.4.2.7 Low-Voltage Current Sinks (LVLED1 to LVLED6)
- 7.4.2.8 Low-Voltage LED Biasing
- 7.4.2.9 Brightness Register Current Control
- 7.4.2.10 LED Current Mapping Modes
- 7.4.2.11 Exponential Mapping
- 7.4.2.12 Linear Mapping
- 7.4.2.13 Start-up/Shutdown Ramp
- 7.4.2.14 Run-Time Ramp
- 7.4.3 Low-Voltage LED Pattern Generator
- 7.4.4 Fault Flags/Protection Features
- 7.4.5 I2C-Compatible Interface
- 7.4.1
High-Voltage LED Control
- 7.5 Register Descriptions
-
8 Applications and Implementation
- 8.1 Application Information
- 8.2
Typical Application
- 8.2.1 Design Requirements
- 8.2.2
Detailed Design Procedure
- 8.2.2.1 Boost Converter Maximum Output Power (Boost)
- 8.2.2.2 Boost Inductor Selection
- 8.2.2.3 Output Capacitor Selection
- 8.2.2.4 Schottky Diode Selection
- 8.2.2.5 Input Capacitor Selection
- 8.2.2.6 Maximum Output Power (Charge Pump)
- 8.2.2.7 Charge Pump Flying Capacitor Selection
- 8.2.2.8 Charge Pump Output Capacitor Selection
- 8.2.2.9 Charge Pump Input Capacitor Selection
- 8.2.3 Application Performance Plots
- 8.3 Initialization Set Up
- 9 Power Supply Recommendations
- 10Layout
- 11器件和文檔支持
- 12機械封裝和可訂購信息
11 器件和文檔支持
11.1 器件支持
11.1.1 第三方產品免責聲明
TI 發(fā)布的與第三方產品或服務有關的信息，不能構成與此類產品或服務或保修的適用性有關的認可，不能構成此類產品或服務單獨或與任何 TI 產品或服務一起的表示或認可。
11.2 Trademarks
All other trademarks are the property of their respective owners.
11.3 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
11.4 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms and definitions.