ZHCSJD8B August   2018  – January 2020 TLV1805-Q1

PRODUCTION DATA.  

1. 1 特性
2. 2 應(yīng)用
3. 3 說(shuō)明
   1.     Device Images
      1.      采用 N 溝道 MOSFET 的反向電流保護(hù)
      2.      采用 P 溝道 MOSFET 的反向電流和過(guò)壓保護(hù)
4. 4 修訂歷史記錄
5. 5 Pin Configuration and Functions
   1.     Pin Functions
6. 6 Specifications
   1. 6.1 Absolute Maximum Ratings
   2. 6.2 ESD Ratings
   3. 6.3 Recommended Operating Conditions
   4. 6.4 Thermal Information
   5. 6.5 Electrical Characteristics
   6. 6.6 Switching Characteristics
   7. 6.7 Typical Characteristics
7. 7 Detailed Description
   1. 7.1 Overview
   2. 7.2 Functional Block Diagram
   3. 7.3 Feature Description
      1. 7.3.1 Rail to Rail Inputs
      2. 7.3.2 Power On Reset
      3. 7.3.3 High Power Push-Pull Output
      4. 7.3.4 Shutdown Function
      5. 7.3.5 Internal Hysteresis
   4. 7.4 Device Functional Modes
      1. 7.4.1 External Hysteresis
         1. 7.4.1.1 Inverting Comparator With Hysteresis
         2. 7.4.1.2 Noninverting Comparator With Hysteresis
8. 8 Application and Implementation
   1. 8.1 Application Information
   2. 8.2 Typical Applications
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
      4. 8.2.4 Reverse Current Protection Using MOSFET and TLV1805-Q1
         1. 8.2.4.1 Minimum Reverse Current
         2. 8.2.4.2 N-Channel Reverse Current Protection Circuit
            1. 8.2.4.2.1 N-Channel Oscillator Circuit
      5. 8.2.5 P-Channel Reverse Current Protection Circuit
      6. 8.2.6 P-Channel Reverse Current Protection With Overvotlage Protection
      7. 8.2.7 ORing MOSFET Controller
9. 9 Power Supply Recommendations
10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
11. 11器件和文檔支持
    1. 11.1 文檔支持
       1. 11.1.1 相關(guān)文檔
    2. 11.2 接收文檔更新通知
    3. 11.3 支持資源
    4. 11.4 商標(biāo)
    5. 11.5 靜電放電警告
    6. 11.6 Glossary
12. 12機(jī)械、封裝和可訂購(gòu)信息