ZHCS792F March 2012 – January 2017 TLV62090
PRODUCTION DATA.
- 1 特性
- 2 應(yīng)用范圍
- 3 說(shuō)明
- 4 修訂歷史記錄
- 5 Pin Configuration and Functions
- 6 Specifications
- 7 Detailed Description
- 8 Application and Implementation
- 9 Power Supply Recommendations
- 10Layout
- 11器件和文檔支持
- 12機(jī)械、封裝和可訂購(gòu)信息
封裝選項(xiàng)
請(qǐng)參考 PDF 數(shù)據(jù)表獲取器件具體的封裝圖。
機(jī)械數(shù)據(jù) (封裝 | 引腳)
- RGT|16
散熱焊盤(pán)機(jī)械數(shù)據(jù) (封裝 | 引腳)
訂購(gòu)信息
6 Specifications
6.1 Absolute Maximum Ratings(1)
| VALUE | UNIT | |||
|---|---|---|---|---|
| MIN | MAX | |||
| Voltage range(2) | PVIN, AVIN, FB, SS, EN, DEF, VOS | – 0.3 | 7 | V |
| SW (DC), PG | – 0.3 | VIN + 0.3 | ||
| SW (AC, less than 10 ns)(3) | – 3.0 | 10 | ||
| CN, CP | – 0.3 | VIN + 7 | ||
| Power Good sink current | PG | 1 | mA | |
| Operating junction temperature range, TJ | – 40 | 150 | °C | |
| Storage temperature, Tstg | – 65 | 150 | °C | |
(1) Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground terminal.
(3) While switching
6.2 ESD Ratings
| MAX | UNIT | |||
|---|---|---|---|---|
| V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) | ±2000 | V |
| Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) | ±500 | |||
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
| MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|
| VIN | Input voltage range VIN | 2.5 | 5.5 | V | |
| TA | Operating ambient temperature | –40 | 85 | °C | |
| TJ | Operating junction temperature | –40 | 125 | °C |
6.4 Thermal Information
| THERMAL METRIC(1) | TLV62090 | UNITS | |
|---|---|---|---|
| VQFN (16 PINS) | |||
| RθJA | Junction-to-ambient thermal resistance | 47 | °C/W |
| RθJC(top) | Junction-to-case (top) thermal resistance | 60 | |
| RθJB | Junction-to-board thermal resistance | 20 | |
| ψJT | Junction-to-top characterization parameter | 1.5 | |
| ψJB | Junction-to-board characterization parameter | 20 | |
| RθJC(bot) | Junction-to-case (bottom) thermal resistance | 5.3 | |
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.
6.5 Electrical Characteristics
VIN = 3.6V, TA = –40°C to 85°C, typical values are at TA = 25°C (unless otherwise noted)| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| SUPPLY | ||||||
| VIN | Input voltage range | 2.5 | 5.5 | V | ||
| IQIN | Quiescent current | Not switching, FB = FB +5%, into PVIN and AVIN | 20 | µA | ||
| Isd | Shutdown current | Into PVIN and AVIN | 0.6 | 5 | µA | |
| VUVLO | Undervoltage lockout threshold | VIN falling | 2.1 | 2.2 | 2.3 | V |
| Undervoltage lockout hysteresis | 200 | mV | ||||
| TSD | Thermal shutdown | Temperature rising | 150 | ºC | ||
| Thermal shutdown hysteresis | 20 | ºC | ||||
| CONTROL SIGNAL EN | ||||||
| VH | High level input voltage | VIN = 2.5 V to 5.5 V | 1 | 0.65 | V | |
| VL | Low level input voltage | VIN = 2.5 V to 5.5 V | 0.60 | 0.4 | V | |
| Ilkg | Input leakage current | EN = GND or VIN | 10 | 100 | nA | |
| RPD | Pull down resistance | EN = Low | 400 | kΩ | ||
| SOFTSTART | ||||||
| ISS | Softstart current | 6.3 | 7.5 | 8.7 | µA | |
| POWER GOOD | ||||||
| VTH_PG | Power good threshold | Output voltage rising | 93% | 95% | 97% | |
| Output voltage falling | 88% | 90% | 92% | |||
| VL | Low level voltage | I(sink) = 1 mA | 0.4 | V | ||
| Ilkg | Leakage current | VPG = 3.6 V | 10 | 100 | nA | |
| POWER SWITCH | ||||||
| RDS(on) | High side FET on-resistance | ISW = 500 mA | 50 | mΩ | ||
| Low side FET on-resistance | ISW = 500 mA | 40 | mΩ | |||
| ILIMF | High side FET switch current limit | 3.7 | 4.6 | 5.5 | A | |
| fs | Switching frequency | IOUT = 3 A | 1.4 | MHz | ||
| OUTPUT | ||||||
| VOUT | Output voltage range | 0.8 | VIN | V | ||
| Rod | Output discharge resistor | EN = GND, VOUT = 1.8 V | 200 | Ω | ||
| VFB | Feedback regulation voltage | PWM Mode | 0.8 | V | ||
| VFB | Feedback voltage accuracy VIN ≥ VOUT + 1 V |
IOUT = 1 A, PWM mode, TJ = 25°C | -1% | +1% | ||
| IOUT = 1 A, PWM mode | -1.4% | +1.4% | ||||
| IOUT = 0 mA, VOUT ≥ 1.2 V, PFM mode (2) | -1.4% | +3% | ||||
| IOUT = 0 mA, VOUT < 1.2 V, PFM mode (1) | -1.4% | +3.7% | ||||
| IFB | Feedback input bias current | VFB = 0.8 V | 10 | 100 | nA | |
| Line regulation | VOUT = 1.8 V, PWM operation | 0.016 | %/V | |||
| Load regulation | VOUT = 1.8 V, PWM operation | 0.04 | %/A | |||
(1) For output voltages < 1.2 V, use a 2 x 22 µF output capacitance to achieve +3% output voltage accuracy in PFM mode.
(2) Conditions: L = 1 µH, COUT = 22 µF. For more information, see the Power Save Mode Operation section of this data sheet.
6.6 Typical Characteristics
| VOUT = 1.8 V | L = 1 µH |
| VOUT = 1.0 V | L = 1 µH |
| VOUT = 3.3 V | L = 1 µH |
| VOUT = 1.8 V | L = 1 µH |
1.
Figure 4. Switching Frequency vs Input Voltage
| VOUT = 1.8 V | L = 1 µH | IOUT = 1 A |
1.
Figure 6. Switching Frequency vs Input Voltage
| VOUT = 1.0 V | L = 1 µH | IOUT = 1 A |
1.
Figure 8. Switching Frequency vs Input Voltage
| VOUT = 3.3 V | L = 1 µH | IOUT = 1 A |