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ZHCS342B November 2013 – July 2014 TPS62740 , TPS62742

PRODUCTION DATA.

封裝選項

機械數(shù)據(jù) (封裝 | 引腳)

DSS|12
- MPDS336C

散熱焊盤機械數(shù)據(jù) (封裝 | 引腳)

DSS|12
- QFND199C

訂購信息

8 Specifications

8.1 Absolute Maximum Ratings⁽¹⁾

Over operating free-air temperature range (unless otherwise noted)

			MIN	MAX	UNIT
Pin voltage⁽²⁾	VIN		–0.3	6	V
	SW ⁽³⁾		–0.3	V_IN +0.3V	V
	EN, CTRL, VSEL1-4		–0.3	V_IN +0.3V	V
	PG		–0.3	V_IN +0.3V	V
	VOUT, LOAD		–0.3	3.7	V
PG pin	I_PG	sink current		10	mA
Maximum operating junction temperature, T_J			–40	150	°C

(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.

(2) All voltage values are with respect to network ground terminal GND.

(3) The MAX value V_IN +0.3V applies for applicative operation (device switching), DC voltage applied to this pin may not exceed 4V

8.2 Handling Ratings

			MIN	MAX	UNIT
T_stg	Storage temperature range		–65	150	°C
V_(ESD)	Electrostatic discharge	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins⁽¹⁾		2000	V
V_(ESD)	Electrostatic discharge	Charged device model (CDM), per JEDEC specification JESD22-C101, all pins⁽²⁾		1000	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. The human body model is a 100-pF capacitor discharged through a 1.5-kΩ resistor into each pin.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

8.3 Recommended Operating Conditions

				MIN	NOM	MAX	UNIT
V_IN	Supply voltage V_IN⁽¹⁾			2.2		5.5	V
I_OUT + I _LOAD	Device output current (sum of I_OUT and I _LOAD)	V_OUTnom + 0.7V ≤ V_IN ≤ 5.5V	TPS62740			300	mA
		3V ≤ V_IN, V_OUTnom + 0.7V ≤ V_IN ≤ 5.5V	TPS62742			400
		V_OUTnom ≤ V_IN ≤ V_OUTnom +0.7V				100
I_LOAD	Load current (current from LOAD pin)					100
L	Inductance			1.5	2.2	3.3	µH
C_OUT	Output capacitance connected to VOUT pin (not including LOAD pin)					22	µF
C_LOAD	Capacitance connected to LOAD pin					10	µF
T_J	Operating junction temperature range			-40		125	°C
T_A	Ambient temperature range			-40		85	°C

(1) The minimum required supply voltage for startup is 2.15V (undervoltage lockout threshold V_{TH_UVLO+}) . The device is functional down to 2V supply voltage (falling undervoltage lockout threshold V_{TH_UVLO-}).

8.4 Thermal Information

THERMAL METRIC		DSS / 12 PINS	UNIT
R_θJA	Junction-to-ambient thermal resistance	61.8	°C/W
R_θJCtop	Junction-to-case (top) thermal resistance	70.9
R_θJB	Junction-to-board thermal resistance	25.7
ψ_JT	Junction-to-top characterization parameter	1.9
ψ_JB	Junction-to-board characterization parameter	25.7
R_θJCbot	Junction-to-case (bottom) thermal resistance	7.2

8.5 Electrical Characteristics

V_IN = 3.6V, T_A = –40°C to 85°C typical values are at T_A = 25°C (unless otherwise noted)

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT
SUPPLY
V_IN	Input voltage range			2.2		5.5	V
I_Q	Operating quiescent current	EN = V_IN, CTRL = GND, I_OUT = 0µA, V_OUT = 1.8V, device not switching,			360	1800	nA
		EN = V_IN, I_OUT = 0mA, CTRL = GND, V_OUT = 1.8V , device switching			460		nA
		EN = V_IN, I_OUT = 0mA., CTRL = V_IN, V_OUT = 1.8V, device not switching			12.5		µA
I_SD	Shutdown current	EN = GND, shutdown current into V_IN			70	1000	nA
I_SD	Shutdown current	EN = GND, shutdown current into V_IN, T_A = 60°C			150	450	nA
V_{TH_}_UVLO+	Undervoltage lockout threshold	Rising V_IN			2.075	2.15	V
V_{TH_UVLO-}	Undervoltage lockout threshold	Falling V_IN			1.925	2	V
INPUTS EN, CTRL, VSEL 1-4
V_{IH TH}	High level input threshold	2.2V ≤ V_IN ≤ 5.5V				1.1	V
V_{IL TH}	Low level input threshold	2.2V ≤ V_IN ≤ 5.5V		0.4			V
I_IN	Input bias Current	T_A = 25°C				10	nA
I_IN	Input bias Current	T_A = –40°C to 85°C				25	nA
POWER SWITCHES
R_DS(ON)	High side MOSFET on-resistance	V_IN = 3.6V, I_OUT = 50mA			0.6	0.85	Ω
R_DS(ON)	Low Side MOSFET on-resistance	V_IN = 3.6V, I_OUT = 50mA			0.36	0.5	Ω
I_LIMF	High side MOSFET switch current limit	2.2V ≤ V_IN ≤ 5.5V, TPS62740		480	600	720	mA
	High side MOSFET switch current limit	3.0V ≤ V_IN ≤ 5.5V, TPS62742		590	650	740	mA
	Low side MOSFET switch current limit	TPS62740			600		mA
	Low side MOSFET switch current limit	TPS62742			650		mA
OUTPUT DISCHARGE SWITCH (VOUT)
R_{DSCH_VOUT}	MOSFET on-resistance	V_IN = 3.6V, EN = GND, I_OUT = -10mA into VOUT pin			30	65	Ω
I_{IN_VOUT}	Bias current into VOUT pin	V_IN = 3.6V, EN = V_IN, VOUT = 2V, CTRL = GND	T_A = 25°C		40	100	nA
I_{IN_VOUT}	Bias current into VOUT pin	V_IN = 3.6V, EN = V_IN, VOUT = 2V, CTRL = GND	T_A = –40°C to 85°C			1010	nA
LOAD OUTPUT (LOAD)
R_LOAD	High side MOSFET on-resistance	I_LOAD = 50mA, CTRL = V_IN, VOUT = 2.0V, 2.2 V ≤ V_IN ≤ 5.5V			0.6	1.25	Ω
R_{DSCH_LOAD}	Low side MOSFET on-resistance	CTRL = GND, 2.2V ≤ V_IN ≤ 5.5V, I_LOAD = - 10mA			30	65	Ω
t_{Rise_LOAD}	V_LOAD rise time	Starting with CTRL low to high transition, time to ramp V_LOAD from 0V to 95% VOUT = 1.8V, 2.2V ≤ V_IN ≤ 5.5V, I_LOAD = 1mA			315	800	µs
AUTO 100% MODE TRANSITION
V_{TH_100+}	Auto 100% Mode leave detection threshold ⁽¹⁾	Rising V_IN,100% Mode is left with V_IN = V_OUT + V_{TH_100+}, max value at T_J = 85°C		170	250	340	mV
V_{TH_100-}	Auto 100% Mode enter detection threshold ⁽¹⁾	Falling V_IN, 100% Mode is entered with V_IN = V_OUT + V_{TH_100-}, max value at T_J = 85°C		110	200	280	mV
POWER GOOD OUTPUT (PG, OPEN DRAIN)
V_{TH_PG+}	Power good threshold voltage	Rising output voltage on VOUT pin, referred to V_VOUT			97.5%
V_{PG_Hys}	Power good threshold voltage	Hysteresis			-3%
V_OL	Low level output voltage	2.2V ≤ V_IN ≤ 5.5V, EN = GND, current into PG pin I_PG = 4mA				0.3	V
I_{IN_PG}	Bias current into PG pin	PG pin is high impedance, VOUT = 2V, EN = V_IN, CTRL = GND, I_OUT = 0mA	T_A= 25°C		0	10	nA
I_{IN_PG}	Bias current into PG pin		T_A = –40°C to 85°C			25	nA
OUTPUT
t_ONmin	Minimum ON time	V_IN = 3.6V, V_OUT = 2.0V, I_OUT = 0 mA			225		ns
t_OFFmin	Minimum OFF time	V_IN = 2.3V			50		ns
t_{Startup_delay}	Regulator start up delay time	V_IN = 3.6V, from transition EN = low to high until device starts switching			10	25	ms
t_Softstart	Softstart time with reduced switch current limit	2.2V ≤ V_IN ≤ 5.5V, EN = V_IN			700	1200	µs
I_{LIM_softstart}	High side MOSFET switch current limit	Reduced switch current limit during softstart	TPS62740	80	150	200	mA
	High side MOSFET switch current limit		TPS62742		150
	Low side MOSFET switch current limit				150
V_VOUT	Output voltage range	Output voltages are selected with pins VSEL 1 - 4		1.8		3.3	V
	Output voltage accuracy	V_IN = 3.6V, I_OUT = 10mA, V_OUT = 1.8V		-2.5	0%	2.5
	Output voltage accuracy	V_IN = 3.6V, I_OUT = 100mA, V_OUT = 1.8V		–2	0%	2
	DC output voltage load regulation	V_OUT = 1.8V, V_IN= 3.6V, CTRL = V_IN			0.001		%/mA
	DC output voltage line regulation	V_OUT = 1.8V, CTRL = V_IN, I_OUT = 10 mA, 2.5V ≤ V_IN ≤ 5.5V			0		%/V

(1) V_IN is compared to the programmed output voltage (V_OUT). When V_IN–V_OUT falls below V_{TH_100-} the device enters 100% Mode by turning the high side MOSFET on. The 100% Mode is exited when V_IN–V_OUT exceeds V_{TH_100+} and the device starts switching. The hysteresis for the 100% Mode detection threshold V_{TH_100+} - V_{TH_100-} will always be positive and will be approximately 50 mV(typ.)