M. Shoga and D. Binder, "Theory of Single
Event Latchup in Complementary Metal-Oxide Semiconductor Integrated Circuits", IEEE
Trans. Nucl. Sci., Vol. 33(6), Dec. 1986, pp. 1714-1717.
G. Bruguier and J. M. Palau, "Single
particle-induced latchup", IEEE Trans. Nucl. Sci., Vol. 43(2), Mar. 1996, pp.
522-532.
G. H. Johnson, J. H. Hohl, R. D. Schrimpf and K. F. Galloway,
"Simulating single-event burnout of n-channel power MOSFET's," in IEEE Transactions on
Electron Devices, vol. 40, no. 5, pp. 1001-1008, May 1993.
J. R. Brews, M. Allenspach, R. D. Schrimpf, K. F. Galloway,J. L.
Titus and C. F. Wheatley, "A conceptual model of a single-event gate-rupture in power
MOSFETs," in IEEE Transactions on Nuclear Science, vol. 40, no. 6, pp. 1959-1966, Dec.
1993.
G. H. Johnson, R. D. Schrimpf, K. F. Galloway, and R.
Koga,“Temperature dependence of single event burnout in n-channel power MOSFETs [for space
application],” IEEE Trans. Nucl. Sci., 39(6), Dec. 1992, pp.1605-1612.
A. J. Tylka, J. H. Adams, P. R. Boberg, et
al.,"CREME96: A Revision of the Cosmic Ray Effects on Micro-Electronics Code", IEEE
Trans. on Nucl. Sci., Vol. 44(6), Dec. 1997, pp. 2150-2160.
A. J. Tylka, W. F. Dietrich, and P. R.
Boberg, "Probability distributions of high-energy solar-heavy-ion fluxes from IMP-8:
1973-1996", IEEE Trans. on Nucl. Sci.,Vol. 44(6), Dec. 1997, pp. 2140-2149.