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ZHCSGB0B November 2017 – November 2020 LM5145

PRODUCTION DATA

封裝選項

請參考 PDF 數(shù)據(jù)表獲取器件具體的封裝圖。

機械數(shù)據(jù) (封裝 | 引腳)

RGY|20

散熱焊盤機械數(shù)據(jù) (封裝 | 引腳)

訂購信息

7.5 Electrical Characteristics

Typical values correspond to T_J = 25°C. Minimum and maximum limits apply over the –40°C to 125°C junction temperature range unless otherwise stated. V_IN = 48 V, V_EN/UVLO = 1.5 V, R_RT = 25 k? unless otherwise stated.⁽¹⁾⁽²⁾

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
INPUT SUPPLY
V_IN	Operating input voltage range		6		75	V
I_Q-RUN	Operating input current, not switching	V_EN/UVLO = 1.5 V, V_SS/TRK = 0 V		1.8	2.1	mA
I_Q-STBY	Standby input current	V_EN/UVLO = 1 V		1.75	2	mA
I_Q-SDN	Shutdown input current	V_EN/UVLO = 0 V, V_VCC < 1 V		13.5	16	μA
VCC REGULATOR
V_VCC	VCC regulation voltage	V_SS/TRK = 0 V, 9 V ≤ V_VIN ≤ 75 V, 0 mA < I_VCC ≤ 20 mA	7.3	7.5	7.7	V
V_VCC-LDO	VIN to VCC dropout voltage	V_VIN = 6 V, V_SS/TRK = 0 V, I_VCC = 20 mA		0.25	0.63	V
I_SC-LDO	VCC short-circuit current	V_SS/TRK = 0 V, V_VCC = 0 V	40	50	70	mA
V_VCC-UV	VCC undervoltage threshold	V_VCC rising	4.8	4.93	5.2	V
V_VCC-UVH	VCC undervoltage hysteresis	Rising threshold – falling threshold		0.26		V
V_VCC-EXT	Minimum external bias supply voltage	Voltage required to disable VCC regulator	8			V
I_VCC	External VCC input current, not switching	V_SS/TRK = 0 V, V_VCC = 13 V			2.1	mA
ENABLE AND INPUT UVLO
V_SDN	Shutdown to standby threshold	V_EN/UVLO rising		0.42		V
V_SDN-HYS	Shutdown threshold hysteresis	EN/UVLO rising – falling threshold		50		mV
V_EN	Standby to operating threshold	V_EN/UVLO rising	1.164	1.2	1.236	V
I_EN-HYS	Standby to operating hysteresis	V_EN/UVLO = 1.5 V	9	10	11	μA
ERROR AMPLIFIER
V_REF	FB reference voltage	FB connected to COMP	792	800	808	mV
I_FB-BIAS	FB input bias current	V_FB = 0.8 V	–0.1		0.1	μA
V_COMP-OH	COMP output high voltage	V_FB = 0 V, COMP sourcing 1 mA		5		V
V_COMP-OL	COMP output low voltage	COMP sinking 1 mA			0.3	V
AVOL	DC gain			94		dB
GBW	Unity gain bandwidth			6.5		MHz
SOFT-START AND VOLTAGE TRACKING
I_SS	SS/TRK capacitor charging current	V_SS/TRK = 0 V	8.5	10	12	μA
R_SS	SS/TRK discharge FET resistance	V_EN/UVLO = 1 V, V_SS/TRK = 0.1 V		11		Ω
V_SS-FB	SS/TRK to FB offset		–15		15	mV
V_SS-CLAMP	SS/TRK clamp voltage	V_SS/TRK – V_FB, V_FB = 0.8 V		115		mV
POWER GOOD INDICATOR
PG_UTH	FB upper threshold for PGOOD high to low	% of V_REF, V_FB rising	106%	108%	110%
PG_LTH	FB lower threshold for PGOOD high to low	% of V_REF, V_FB falling	90%	92%	94%
PG_{HYS_U}	PGOOD upper threshold hysteresis	% of V_REF		3%
PG_{HYS_L}	PGOOD lower threshold hysteresis	% of V_REF		2%
T_PG-RISE	PGOOD rising filter	FB to PGOOD rising edge		25		μs
T_PG-FALL	PGOOD falling filter	FB to PGOOD falling edge		25		μs
V_PG-_OL	PGOOD low state output voltage	V_FB = 0.9 V, I_PGOOD = 2 mA			150	mV
I_PG-OH	PGOOD high state leakage current	V_FB = 0.8 V, V_PGOOD = 13 V			100	nA
OSCILLATOR
F_SW1	Oscillator Frequency – 1	R_RT = 100 k?		100		kHz
F_SW2	Oscillator Frequency – 2	R_RT = 25 k?	380	400	420	kHz
F_SW3	Oscillator Frequency – 3	R_RT = 12.5 k?		780		kHz
SYNCHRONIZATION INPUT AND OUTPUT
F_SYNC	SYNCIN external clock frequency range	% of nominal frequency set by R_RT	–20%		+50%
V_SYNC-IH	Minimum SYNCIN input logic high		2			V
V_SYNC-IL	Maximum SYNCIN input logic low				0.8	V
R_SYNCIN	SYNCIN input resistance	V_SYNCIN = 3 V		20		kΩ
t_SYNCI-PW	SYNCIN input minimum pulsewidth	Minimum high state or low state duration	50			ns
V_SYNCO-OH	SYNCOUT high state output voltage	I_SYNCOUT = –1 mA (sourcing)	3			V
V_SYNCO-OL	SYNCOUT low state output voltage	I_SYNCOUT = 1 mA (sinking)			0.4	V
t_SYNCOUT	Delay from HO rising to SYNCOUT leading edge	V_SYNCIN = 0 V, T_S = 1/F_SW, F_SW set by R_RT	T_S/2 – 140			ns
t_SYNCIN	Delay from SYNCIN leading edge to HO rising	50% to 50%		150		ns
BOOTSTRAP DIODE AND UNDERVOLTAGE THRESHOLD
V_BST-FWD	Diode forward voltage, VCC to BST	VCC to BST, BST pin sourcing 20 mA		0.75	0.9	V
I_Q-BST	BST to SW quiescent current, not switching	V_SS/TRK = 0 V, V_SW = 48 V, V_BST = 54 V		80		μA
V_BST-UV	BST to SW undervoltage detection	V_BST – V_SW falling		3.4		V
V_BST-HYS	BST to SW undervoltage hysteresis	V_BST – V_SW rising		0.42		V
PWM CONTROL
t_ON(MIN)	Minimum controllable on-time	V_BST – V_SW = 7 V, HO 50% to 50%		40	60	ns
t_OFF(MIN)	Minimum off-time	V_BST – V_SW = 7 V, HO 50% to 50%		140	200	ns
DC_100kHz	Maximum duty cycle	F_SW = 100 kHz, 6 V ≤ V_VIN ≤ 60 V	98%	99%
DC_400kHz	Maximum duty cycle	F_SW = 400 kHz, 6 V ≤ V_VIN ≤ 60 V	90%	94%
V_RAMP(min)	Ramp valley voltage (COMP at 0% duty cycle)			300		mV
k_FF	PWM feedforward gain (V_IN / V_RAMP)	6 V ≤ V_VIN ≤ 75 V		15		V/V
OVERCURRENT PROTECT (OCP) – VALLEY CURRENT LIMITING
I_RS	ILIM source current, R_SENSE mode	Low voltage detected at ILIM	90	100	110	μA
I_RDSON	ILIM source current, R_DS(on) mode	SW voltage detected at ILIM, T_J = 25°C	180	200	220	μA
I_RDSONTC	ILIM current tempco	R_DS-ON mode		4500		ppm/°C
I_RSTC	ILIM current tempco	R_SENSE mode		0		ppm/°C
V_ILIM-TH	ILIM comparator threshold at ILIM		–8	–2	3.5	mV
SHORT-CIRCUIT PROTECT (SCP) – DUTY CYCLE CLAMP
V_CLAMP-OS	Clamp offset voltage – no current limiting	CLAMP to COMP steady state offset voltage	0.2 + V_VIN/75			V
V_CLAMP-MIN	Minimum clamp voltage	CLAMP voltage with continuous current limiting	0.3 + V_VIN/150			V
HICCUP MODE FAULT PROTECTION
C_HICC-DEL	Hiccup mode activation delay	Clock cycles with current limiting before hiccup off-time activated		128		cycles
C_HICCUP	Hiccup mode off-time after activation	Clock cycles with no switching followed by SS/TRK release		8192		cycles
DIODE EMULATION
V_ZCD-SS	Zero-cross detect (ZCD) soft-start ramp	ZCD threshold measured at SW pin 50 clock cycles after first HO pulse		0		mV
V_ZCD-_DIS	Zero-cross detect disable threshold (CCM)	ZCD threshold measured at SW pin 1000 clock cycles after first HO pulse		200		mV
V_DEM-TH	Diode emulation zero-cross threshold	Measured at SW with V_SW rising	–5	0	5	mV
GATE DRIVERS
R_HO-UP	HO high-state resistance, HO to BST	V_BST – V_SW = 7 V, I_HO = –100 mA		1.5		Ω
R_HO-DOWN	HO low-state resistance, HO to SW	V_BST – V_SW = 7 V, I_HO = 100 mA		0.9		Ω
R_LO-UP	LO high-state resistance, LO to VCC	V_BST – V_SW = 7 V, I_LO = –100 mA		1.5		Ω
R_LO-DOWN	LO low-state resistance, LO to PGND	V_BST – V_SW = 7 V, I_LO = 100 mA		0.9		Ω
I_HOH, I_LOH	HO, LO source current	V_BST – V_SW = 7 V, HO = SW, LO = AGND		2.3		A
I_HOL, I_LOL	HO, LO sink current	V_BST – V_SW = 7 V, HO = BST, LO = VCC		3.5		A
THERMAL SHUTDOWN
T_SD	Thermal shutdown threshold	T_J rising		175		°C
T_SD-HYS	Thermal shutdown hysteresis			20		°C

(1) All minimum and maximum limits are specified by correlating the electrical characteristics to process and temperature variations and applying statistical process control.

(2) The junction temperature (T_J in °C) is calculated from the ambient temperature (T_A in °C) and power dissipation (P_D in Watts) as follows: T_J = T_A + (P_D ? R_θJA) where R_θJA (in °C/W) is the package thermal impedance provided in Section 7.4.