10 Revision History
Changes from Revision E (March 2017) to Revision F (August 2024)
Changes from Revision D (October 2014) to Revision E (March 2017)
- 將節(jié) 1要點(diǎn)文本從“...認(rèn)證..”更改為“...測試指南..”，將 HBM 分類等級從“H2”更改為“H1C”Go
- Moved Tstg spec to the Abs Max Ratings table per new data sheet standardGo
- Changed "Handling Ratings" to "ESD Ratings" and HBM Value From "±2 kV" to "±1000 V".Go
- Changed Electrical Characteristics condition statement to "This specification applies over the full recommended input voltage range VI = 2.7 V to 5.5 V and over the temperature range TJ = –40°C to 125°C unless otherwise noted. Typical values apply for VI = 3.6 V and TJ = 25°C."Go
- Changed The specification applies over the full recommended input voltage range VI = 2.7 V to 5.5 V and over the temperature range TJ = –40 °C to 125°C unless otherwise noted. Typical values apply for VI = 3.6 V and TJ = 25°Go
- Added Section 8.2.4 description Go
Changes from Revision C (March 2014) to Revision D (October 2014)
- 全局編輯更改，數(shù)據(jù)表使用了全新的格式Go
- 將最大效率從 89% 更改為 91%，從 81% 更改為 85%Go
- 刪除了“最小 1.25MHz”Go
- 將 1μA 關(guān)斷電流更改為 0.2μA 典型值Go
- Added Thermal Pad to Absolute Maximum Ratings. Added min./max. values where missingGo
- Added V(VIN), V(INN), VNEG, VPOS, V(ENN), V(ENP), V(PSN) to Recommended Operating Conditions tableGo
- Changed symbol names to JEDEC complianceGo
- Added frequency and duty cycles to Switching Characteristics table. Removed from Electrical Characteristics tableGo
- Added Rectifier Diode Selection GuideGo
- Added P-MOSFET Selection GuideGo
Changes from Revision B (February 2013) to Revision C (March 2014)
- 添加了“在 –40°C 至 125°C 結(jié)溫范圍內(nèi)測試了電氣特性”Go
- 添加了“器件信息”表Go
- Deleted TA table rowGo
- Changed INN to VINN, added pin names VIN and INNGo
- Added pin name VPOSGo
- Added pin name VNEGGo
- Changed INP to VINP, added pin name INPGo
- Changed "between pins OUTN to VINN" to "between pins OUTN to INN"Go
- Added operating junction temperatureGo
- Added "In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may require derating. See Section 8.2.5 for details."Go
- Deleted "virtual" from "Operating virtual junction temperature range"Go
- Changed Electrical Characteristics condition statement to "This specification applies over the full recommended input voltage range VI = 2.7 V to 5.5 V and over the temperature range TJ = TA = –40°C to 125°C unless otherwise noted. Typical values apply for VI = 3.6 V and TJ = TA = 25°C."Go
- Changed ILIM,min = 1800 mA to 1700 mAGo
- Deleted VPOS = 5 V (105°C) rowGo
- Changed rDS(on)P,max (VPOS = 5 V) = 300 m? to 390 m?Go
- Changed rDS(on)P,max (VPOS = 10 V) = 200 m? to 230 m?Go
- Changed ILIMP,min = 1800 mA to 1700 mAGo
- Changed ILIMP,max = 2200 mA to 2250 mAGo
- Added TA = –40°C to 85°CGo
- Changed minimum f = 1250 kHz to 1150 kHzGo
- Editorially updated Block DiagramGo
- Changed "The maximum recommended junction temperature (TJ) of the TPS65131-Q1 is 125°C." to "The recommended device junction temperature range, TJ, is -40°C to 125°C."Go
- Changed RθJA = 37.8°C/W to RθJA = 34.1°C/WGo
- Changed "Specified regulator operation is ensured to a maximum ambient temperature TA of 105°C." to "The recommended operating ambient temperature range for the device is TA = –40°C to 105°C."Go
- Changed "Therefore, the maximum power dissipation is about 1058 mW" to "Use Equation 13 to calculate the maximum power dissipation, PDmax, as a function of TA. In this equation, use TJ = 125°C to operate the device within the recommended temperature range, use TJ = T(TS) to determine the absolute maximum threshold when the device might go into thermal shutdown."Go
- Changed Equation 13
Go
Changes from Revision A (November 2012) to Revision B (February 2013)
- 將 CDM ESD 等級從 C3B 改為 C4B。Go
Changes from Revision * (May 2012) to Revision A (November 2012)
- 器件從預(yù)發(fā)布變?yōu)榱慨a(chǎn)Go
- Added thermal information table values.Go
- Added VPOS = 5 V (105°C) row and values to Electrical Characteristics table.Go