ZHCSTH3D December 2006 – July 2024 UCC27200 , UCC27201
PRODUCTION DATA
- 1
- 1 特性
- 2 應(yīng)用
- 3 說明
- 4 Pin Configuration and Functions
- 5 Specifications
- 6 Detailed Description
- 7 Application and Implementation
- 8 Power Supply Recommendations
- 9 Layout
- 10Device and Documentation Support
- 11Revision History
- 12Mechanical, Packaging, and Orderable Information
封裝選項(xiàng)
機(jī)械數(shù)據(jù) (封裝 | 引腳)
散熱焊盤機(jī)械數(shù)據(jù) (封裝 | 引腳)
- DDA|8
訂購信息
4 Pin Configuration and Functions
Figure 4-1 D Package8-Pin SOICTop View
Figure 4-2 DDA Package8-Pin SO PowerPADTop
View
Figure 4-3 DRM Package8-Pin VSONTop ViewTable 4-1 Pin Functions
| PIN | I/O | DESCRIPTION | |
|---|---|---|---|
| NAME | NO. | ||
| HB | 2 | I | High-side bootstrap supply. The bootstrap diode is on-chip but the external bootstrap capacitor is required. Connect positive side of the bootstrap capacitor to this pin. Typical range of HB bypass capacitor is 0.022μF to 0.1μF, the value is dependant on the gate charge of the high-side MOSFET however. |
| HI | 5 | I | High-side input. |
| HO | 3 | O | High-side output. Connect to the gate of the high-side power MOSFET. |
| HS | 4 | I | High-side source connection. Connect to source of high-side power MOSFET. Connect negative side of bootstrap capacitor to this pin. |
| LI | 6 | I | Low-side input. |
| LO | 8 | O | Low-side output. Connect to the gate of the low-side power MOSFET. |
| VDD | 1 | I | Positive supply to the lower gate driver. Decouple this pin to VSS (GND). Typical decoupling capacitor range is 0.22μF to 1μF. |
| VSS | 7 | O | Negative supply terminal for the device which is generally grounded. |
| PowerPAD | PAD | — | Used on the DDA and DRM packages only. Electrically referenced to VSS (GND)(1). Connect to a large thermal mass trace or GND plane to dramatically improve thermal performance. |
(1) The thermal pad is not directly connected to any leads of the
package; however, it is electrically and thermally connected to the substrate
which is the ground of the device.