SLVK163 November 2023 TPS7H6003-SP
PRODUCTION DATA
1.2 Device Details
Testing was performed per MIL-STD-883, Test Method 1019, with a sample size per MIL-PRF-38535, Appendix C, test condition A (high dose rate).
Table 1-1 Device and Exposure
Details
| RHA TID Details: up to 100 krad(Si) | |
|---|---|
| TI Part Number | TPS7H6003-SP |
| Orderable Number | 5962R2220101VXC |
| Device function | Half Bridge Gate Driver |
| Die Name | RTPS7H6003A0VM |
| Package | 48-pin CFP (HBX) |
| Technology | LBC7 (250-nm Linear BiCMOS) |
| Quantity tested | HDR :
|
| Lot Accept/Reject | Passes 100 krad(Si), no observed fails |
| HDR radiation facility | Texas Instruments CLAB Dallas, Texas |
| Die Lot Number and Assembly Lot Number | 2349610TI1-18 / 3008205 MTT |
| HDR Dose Rate | 194.3 rad(Si) / s |
| HDR Radiation Source | Gammacell 220 Excel (GC-220E) Co-60 |
| Irradiation and Test Temperature | Ambient, room temperature controlled to 25°C ±6°C per MIL-STD-883 and MIL-STD-750 |
Figure 1-1 TPS7H6003-SP Device Used in
Exposure